NSBC123EPDXV6T1G


NSBC123EPDXV6T1G

Part NumberNSBC123EPDXV6T1G

Manufacturer

Description

Datasheet

Package / CaseSOT-563, SOT-666

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

NSBC123EPDXV6T1G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet
Standard Package4000
ManufacturerON Semiconductor
Series-
PackagingTape & Reel (TR)
Part StatusObsolete
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)2.2kOhms
Resistor - Emitter Base (R2)2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce8 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 5mA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max500mW
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageSOT-563
Base Part NumberNSBC1*

NSBC123EPDXV6T1G - Tags

NSBC123EPDXV6T1G NSBC123EPDXV6T1G PDF NSBC123EPDXV6T1G datasheet NSBC123EPDXV6T1G specification NSBC123EPDXV6T1G image NSBC123EPDXV6T1G India Renesas Electronics India NSBC123EPDXV6T1G buy NSBC123EPDXV6T1G NSBC123EPDXV6T1G price NSBC123EPDXV6T1G distributor NSBC123EPDXV6T1G supplier NSBC123EPDXV6T1G wholesales