NSBC123TDP6T5G

Part NumberNSBC123TDP6T5G

ManufacturerON Semiconductor

DescriptionTRANS 2NPN PREBIAS 0.339W SOT963

DatasheetNSBC123TDP6

Package / CaseSOT-963

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionPre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 339mW Surface Mount SOT-963

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NSBC123TDP6T5G - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Datasheet

NSBC123TDP6

Standard Package

8000

Manufacturer

ON Semiconductor

Series

Packaging

Tape & Reel (TR)

Part Status

Active

Transistor Type

2 NPN - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2kOhms

Resistor - Emitter Base (R2)

DC Current Gain (hFE) (Min) @ Ic, Vce

160 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 1mA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

Power - Max

339mW

Mounting Type

Surface Mount

Package / Case

SOT-963

Supplier Device Package