NSV1C200MZ4T1G


NSV1C200MZ4T1G

Part NumberNSV1C200MZ4T1G

Manufacturer

Description

Datasheet

Package / CaseTO-261-4, TO-261AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

NSV1C200MZ4T1G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package1
ManufacturerON Semiconductor
Series-
PackagingCut Tape (CT)
Part StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)2A
Voltage - Collector Emitter Breakdown (Max)100V
Vce Saturation (Max) @ Ib, Ic220mV @ 200mA, 2A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 500mA, 2V
Power - Max800mW
Frequency - Transition120MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-261-4, TO-261AA
Supplier Device PackageSOT-223

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NSV1C200MZ4T1G - Tags

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