NSV20101JT1G


NSV20101JT1G

Part NumberNSV20101JT1G

Manufacturer

Description

Datasheet

Package / CaseSC-89, SOT-490

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

NSV20101JT1G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package3000
ManufacturerON Semiconductor
Series-
PackagingTape & Reel (TR)
Part StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)1A
Voltage - Collector Emitter Breakdown (Max)20V
Vce Saturation (Max) @ Ib, Ic220mV @ 100mA, 1A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 100mA, 2V
Power - Max255mW
Frequency - Transition350MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSC-89, SOT-490
Supplier Device PackageSC-89-3

NSV20101JT1G - Tags

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