NSV40200UW6T1G


NSV40200UW6T1G

Part NumberNSV40200UW6T1G

Manufacturer

Description

Datasheet

Package / Case6-WDFN Exposed Pad

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

NSV40200UW6T1G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package3000
ManufacturerON Semiconductor
Series-
PackagingTape & Reel (TR)
Part StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)2A
Voltage - Collector Emitter Breakdown (Max)40V
Vce Saturation (Max) @ Ib, Ic300mV @ 20mA, 2A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 1A, 2V
Power - Max875mW
Frequency - Transition140MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-WDFN Exposed Pad
Supplier Device Package6-WDFN (2x2)

NSV40200UW6T1G - Tags

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