NSV60101DMTWTBG


NSV60101DMTWTBG

Part NumberNSV60101DMTWTBG

Manufacturer

Description

Datasheet

Package / Case6-WDFN Exposed Pad

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

NSV60101DMTWTBG - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Datasheet
Standard Package1
ManufacturerON Semiconductor
Series-
PackagingCut Tape (CT)
Part StatusActive
Transistor Type2 NPN (Dual)
Current - Collector (Ic) (Max)1A
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic180mV @ 100mA, 1A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 500mA, 2V
Power - Max2.27W
Frequency - Transition180MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-WDFN Exposed Pad
Supplier Device Package6-WDFN (2x2)

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