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NSVBSS63LT1G

NSVBSS63LT1G

Part NumberNSVBSS63LT1G

ManufacturerON Semiconductor

DescriptionTRANS PNP 100V 0.1A SOT-23

DatasheetBSS63LT1G, NSVBSS63LT1G

Package / CaseTO-236-3, SC-59, SOT-23-3

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Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor PNP 100V 100mA 95MHz 225mW Surface Mount SOT-23-3 (TO-236)

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NSVBSS63LT1G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet	BSS63LT1G, NSVBSS63LT1G
Standard Package	1
Manufacturer	ON Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	PNP
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	100V
Vce Saturation (Max) @ Ib, Ic	250mV @ 2.5mA, 25mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 25mA, 1V
Power - Max	225mW
Frequency - Transition	95MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3 (TO-236)

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