NSVBT2222ADW1T1G

Part NumberNSVBT2222ADW1T1G

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Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Datasheet	MBT2222ADW1, NSVBT2222ADW1
Standard Package	1
Manufacturer	ON Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	2 NPN (Dual)
Current - Collector (Ic) (Max)	600mA
Voltage - Collector Emitter Breakdown (Max)	40V
Vce Saturation (Max) @ Ib, Ic	1V @ 50mA, 500mA
Current - Collector Cutoff (Max)	10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V
Power - Max	150mW
Frequency - Transition	300MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	SC-88/SC70-6/SOT-363

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ULN2003V12T16-13	Diodes Incorporated, Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Surface Mount 16-TSSOP,	View
ULN2003D1013TR	STMicroelectronics, Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Surface Mount 16-SO,	View
VT6X12T2R	Rohm Semiconductor, Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 100mA 350MHz 150mW Surface Mount VMT6,	View