NSVEMC2DXV5T1G


NSVEMC2DXV5T1G

Part NumberNSVEMC2DXV5T1G

Manufacturer

Description

Datasheet

Package / CaseSOT-553

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

NSVEMC2DXV5T1G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet
Standard Package1
ManufacturerON Semiconductor
Series-
PackagingCut Tape (CT)
Part StatusActive
Transistor Type1 NPN, 1 PNP - Pre - Biased (Base-Collector Junction)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)22kOhms
Resistor - Emitter Base (R2)22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max500mW
Mounting TypeSurface Mount
Package / CaseSOT-553
Supplier Device PackageSOT-553

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