Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	NSV,S,MMBTH10L(4L)
Standard Package	3000
Manufacturer	ON Semiconductor
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	25V
Frequency - Transition	650MHz
Noise Figure (dB Typ @ f)	-
Gain	-
Power - Max	225mW
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 4mA, 10V
Current - Collector (Ic) (Max)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23
Base Part Number	MMBTH10

MT3S20P(TE12L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 80mA 7GHz 1.8W Surface Mount PW-MINI,	View
BFR106E6327HTSA1	Infineon Technologies, RF Transistor NPN 15V 210mA 5GHz 700mW Surface Mount SOT-23-3,	View
2SC5227A-5-TB-E	ON Semiconductor, RF Transistor NPN 10V 70mA 7GHz 200mW Surface Mount 3-CP,	View
BFP740FH6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 30mA 42GHz 160mW Surface Mount 4-TSFP,	View
2SC5086-O,LF	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 80mA 7GHz 100mW Surface Mount SSM,	View
BFU660F,115	NXP USA Inc., RF Transistor NPN 5.5V 60mA 21GHz 225mW Surface Mount 4-DFP,	View
MMBTH10LT1G	ON Semiconductor, RF Transistor NPN 25V 650MHz 225mW Surface Mount SOT-23-3 (TO-236),	View
2SC4098T106P	Rohm Semiconductor, RF Transistor NPN 25V 50mA 300MHz 200mW Surface Mount UMT3,	View
BFR182WH6327XTSA1	Infineon Technologies, RF Transistor NPN 12V 35mA 8GHz 250mW Surface Mount PG-SOT323-3,	View
BFP196WNH6327XTSA1	Infineon Technologies, RF Transistor NPN 12V 150mA 7.5GHz 700mW Surface Mount PG-SOT343-4,	View
2SC5087YTE85LF	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 80mA 7GHz 150mW Surface Mount SMQ,	View
2SC5095-O(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 10V 15mA 10GHz 100mW Surface Mount SC-70,	View

NSVMMBTH10LT1G

Part NumberNSVMMBTH10LT1G