NTD32N06-1G

Part NumberNTD32N06-1G

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 60V 32A IPAK

DatasheetNTD32N06

Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 32A (Ta) 1.5W (Ta), 93.75W (Tj) Through Hole I-PAK

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NTD32N06-1G - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

NTD32N06

Standard Package

Manufacturer

ON Semiconductor

Series

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

32A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

26mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1725pF @ 25V

FET Feature

Power Dissipation (Max)

1.5W (Ta), 93.75W (Tj)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

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