NTLJF3117PT1G

Part NumberNTLJF3117PT1G

ManufacturerON Semiconductor

DescriptionMOSFET P-CH 20V 2.3A 6-WDFN

DatasheetNTLJF3117P

Package / Case6-WDFN Exposed Pad

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 2.3A (Ta) 710mW (Ta) Surface Mount 6-WDFN (2x2)

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NTLJF3117PT1G - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

NTLJF3117P

Standard Package

Manufacturer

ON Semiconductor

Series

µCool™

Packaging

Cut Tape (CT)

Part Status

Active

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

100mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.2nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

531pF @ 10V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

710mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-WDFN (2x2)

Package / Case

6-WDFN Exposed Pad

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