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NTLJF3117PT1G

NTLJF3117PT1G

Part NumberNTLJF3117PT1G

ManufacturerON Semiconductor

DescriptionMOSFET P-CH 20V 2.3A 6-WDFN

DatasheetNTLJF3117P

Package / Case6-WDFN Exposed Pad

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 2.3A (Ta) 710mW (Ta) Surface Mount 6-WDFN (2x2)

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NTLJF3117PT1G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	NTLJF3117P
Standard Package	3000
Manufacturer	ON Semiconductor
Series	µCool™
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	100mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6.2nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	531pF @ 10V
FET Feature	Schottky Diode (Isolated)
Power Dissipation (Max)	710mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-WDFN (2x2)
Package / Case	6-WDFN Exposed Pad

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