NTMFS4C09NT1G

Part NumberNTMFS4C09NT1G

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	NTMFS4C09N
Standard Package	1500
Manufacturer	ON Semiconductor
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	5.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10.9nC @ 4.5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1252pF @ 15V
FET Feature	-
Power Dissipation (Max)	760mW (Ta), 25.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	5-DFN (5x6) (8-SOFL)
Package / Case	8-PowerTDFN

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FDMC7660DC	ON Semiconductor, N-Channel 30V 30A (Ta), 40A (Tc) 3W (Ta), 78W (Tc) Surface Mount Dual Cool ™ 33, Dual Cool™, PowerTrench®	View
SISS02DN-T1-GE3	Vishay Siliconix, N-Channel 25V 51A (Ta), 80A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3), TrenchFET® Gen IV	View
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PSMN5R5-60YS,115	Nexperia USA Inc., N-Channel 60V 100A (Tc) 130W (Tc) Surface Mount LFPAK56, Power-SO8,	View
IPB083N10N3GATMA1	Infineon Technologies, N-Channel 100V 80A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™	View
TK15S04N1L,LQ	Toshiba Semiconductor and Storage, N-Channel 40V 15A (Ta) 46W (Tc) Surface Mount DPAK+, U-MOSVIII-H	View
IRF60B217	Infineon Technologies, N-Channel 60V 60A (Tc) 83W (Tc) Through Hole TO-220AB, StrongIRFET™	View
SQM120N04-1M7L_GE3	Vishay Siliconix, N-Channel 40V 120A (Tc) 375W (Tc) Surface Mount TO-263, TrenchFET®	View
IRFU3607PBF	Infineon Technologies, N-Channel 75V 56A (Tc) 140W (Tc) Through Hole IPAK (TO-251), HEXFET®	View
PSMN011-80YS,115	Nexperia USA Inc., N-Channel 80V 67A (Tc) 117W (Tc) Surface Mount LFPAK56, Power-SO8,	View

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