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NTR4170NT1G

NTR4170NT1G

Part NumberNTR4170NT1G

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 30V 3.2A SOT23

DatasheetNTR4170N

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 480mW (Ta) Surface Mount SOT-23-3 (TO-236)

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NTR4170NT1G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	NTR4170N
Standard Package	1
Manufacturer	ON Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	-
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Rds On (Max) @ Id, Vgs	55mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id	1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	4.76nC @ 4.5V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	432pF @ 15V
FET Feature	-
Power Dissipation (Max)	480mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

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