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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet NVB072N65S3
Standard Package 800
Manufacturer ON Semiconductor
Series Automotive, AEC-Q101, SuperFET® III, FRFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 72mOhm @ 24A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 82nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 330pF @ 400V
FET Feature -
Power Dissipation (Max) 312W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK-3 (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Vishay Siliconix, N-Channel 100V 30A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
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BUK7240-100A,118
Nexperia USA Inc., N-Channel 100V 34A (Tc) 114W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™
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Toshiba Semiconductor and Storage, N-Channel 600V 11.5A (Tc) 35W (Tc) Through Hole TO-220SIS, DTMOSV
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Diodes Incorporated, N-Channel 250V 310mA (Ta) 2W (Ta) Surface Mount SOT-223,
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Vishay Siliconix, N-Channel 600V 6.2A (Tc) 125W (Tc) Through Hole TO-220AB,
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Diodes Incorporated, N-Channel 60V 4.8A (Ta) 2W (Ta) Surface Mount SOT-223,
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STMicroelectronics, N-Channel 33V 80A (Tc) 110W (Tc) Through Hole TO-220AB, MESH OVERLAY™ III
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IPB180N08S402ATMA1
Infineon Technologies, N-Channel 80V 180A (Tc) 277W (Tc) Surface Mount PG-TO263-7-3, Automotive, AEC-Q101, OptiMOS™
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