NVB082N65S3F

Part NumberNVB082N65S3F

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	NVB082N65S3F
Standard Package	1
Manufacturer	ON Semiconductor
Series	*
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	82mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs	81nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	3410pF @ 400V
FET Feature	-
Power Dissipation (Max)	313W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK-3 (TO-263)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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