NVD5865NLT4G

Part NumberNVD5865NLT4G

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 60V 10A DPAK-4

DatasheetNVD5865NL

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 10A (Ta), 46A (Tc) 3.1W (Ta), 71W (Tc) Surface Mount DPAK

To learn about the specification of NVD5865NLT4G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add NVD5865NLT4G with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of NVD5865NLT4G.
We are offering NVD5865NLT4G for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

NVD5865NLT4G - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

NVD5865NL

Standard Package

Manufacturer

ON Semiconductor

Series

Packaging

Cut Tape (CT)

Part Status

Discontinued at Digi-Key

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

10A (Ta), 46A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

16mOhm @ 19A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

29nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1400pF @ 25V

FET Feature

Power Dissipation (Max)

3.1W (Ta), 71W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

All categories