NVJD5121NT1G

Part NumberNVJD5121NT1G

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet	NTJD5121N, NVJD5121N
Standard Package	1
Manufacturer	ON Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	2 N-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	295mA
Rds On (Max) @ Id, Vgs	1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	0.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	26pF @ 20V
Power - Max	250mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	SC-88/SC70-6/SOT-363

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DMN601VKQ-7	Diodes Incorporated, Mosfet Array 2 N-Channel (Dual) 60V 305mA 250mW Surface Mount SOT-563,	View
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CSD85302LT	Texas Instruments, Mosfet Array 2 N-Channel (Dual) Common Drain 1.7W Surface Mount 4-Picostar (1.31x1.31), NexFET™	View
NX138AKSX	Nexperia USA Inc., Mosfet Array 2 N-Channel (Dual) 60V 170mA (Ta) 325mW Surface Mount 6-TSSOP,	View
SI3134KDW-TP	Micro Commercial Co, Mosfet Array 2 N-Channel (Dual) 20V 750mA 150mW Surface Mount SOT-363,	View

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