NVMFS6H818NT1G
NVMFS6H818NT1G
Part Number NVMFS6H818NT1G Description TRENCH 8 80V NFET Package / Case 8-PowerTDFN, 5 LeadsUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 80V 20A (Ta), 123A (Tc) 3.8W (Ta), 136W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
To learn about the specification of NVMFS6H818NT1G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add NVMFS6H818NT1G with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of NVMFS6H818NT1G.
We are offering NVMFS6H818NT1G for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
NVMFS6H818NT1G - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet NVMFS6H818N Standard Package 1500 Manufacturer ON Semiconductor Series Automotive, AEC-Q101 Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 20A (Ta), 123A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.7mOhm @ 20A, 10V Vgs(th) (Max) @ Id 4V @ 190µA Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 40V FET Feature - Power Dissipation (Max) 3.8W (Ta), 136W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN, 5 Leads
NVMFS6H818NT1G - Related ProductsMore >>
DMN6075S-7 Diodes Incorporated, N-Channel 60V 2A (Ta) 800mW (Ta) Surface Mount SOT-23,
View
BSS205NH6327XTSA1 Infineon Technologies, N-Channel 20V 2.5A (Ta) 500mW (Ta) Surface Mount SOT-23-3, OptiMOS™
View
LND01K1-G Microchip Technology, N-Channel 9V 330mA (Tj) 360mW (Ta) Surface Mount SOT-23-5,
View
SSM6K361NU,LF Toshiba Semiconductor and Storage, N-Channel 100V 3.5A (Ta) 2.5W (Ta) Surface Mount 6-UDFNB (2x2), U-MOSVIII-H
View
PSMN1R3-30YL,115 Nexperia USA Inc., N-Channel 30V 100A (Tc) 121W (Tc) Surface Mount LFPAK56, Power-SO8,
View
IXTH200N10T IXYS, N-Channel 100V 200A (Tc) 550W (Tc) Through Hole TO-247 (IXTH), TrenchMV™
View
FQP85N06 ON Semiconductor, N-Channel 60V 85A (Tc) 160W (Tc) Through Hole TO-220-3, QFET®
View
PHB33NQ20T,118 Nexperia USA Inc., N-Channel 200V 32.7A (Tc) 230W (Tc) Surface Mount D2PAK, TrenchMOS™
View
FDPF8N60ZUT ON Semiconductor, N-Channel 600V 6.5A (Tc) 34.5W (Tc) Through Hole TO-220F, UniFET™
View
DMN3023L-7 Diodes Incorporated, N-Channel 30V 6.2A (Ta) 900mW (Ta) Surface Mount SOT-23,
View
HUFA76429D3ST-F085 ON Semiconductor, N-Channel 60V 20A (Tc) 110W (Tc) Surface Mount TO-252AA, UltraFET™
View
STD4N90K5 STMicroelectronics, N-Channel 900V 3A (Tc) 60W (Tc) Surface Mount DPAK, MDmesh™
View
NVMFS6H818NT1G - Tags
English
