PBSS4230PANP,115


PBSS4230PANP,115

Part NumberPBSS4230PANP,115

Manufacturer

Description

Datasheet

Package / Case6-UDFN Exposed Pad

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

PBSS4230PANP,115 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Datasheet
Standard Package1
ManufacturerNexperia USA Inc.
Series-
PackagingCut Tape (CT)
Part StatusActive
Transistor TypeNPN, PNP
Current - Collector (Ic) (Max)2A
Voltage - Collector Emitter Breakdown (Max)30V
Vce Saturation (Max) @ Ib, Ic290mV @ 200mA, 2A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 1A, 2V
Power - Max510mW
Frequency - Transition120MHz
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-UDFN Exposed Pad
Supplier Device Package6-HUSON-EP (2x2)

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PBSS4230PANP,115 - Tags

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