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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Datasheet PBSS4350SPN
Standard Package 1000
Manufacturer Nexperia USA Inc.
Series -
Packaging Tape & Reel (TR)
Part Status Active
Transistor Type NPN, PNP
Current - Collector (Ic) (Max) 2.7A
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 340mV @ 270mA, 2.7A / 370mV @ 270mA, 2.7A
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1A, 2V / 180 @ 1A, 2V
Power - Max 750mW
Frequency - Transition -
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
Base Part Number PBSS4350SPN
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Diodes Incorporated, Bipolar (BJT) Transistor Array NPN, PNP 65V, 60V 500mA, 600mA 100MHz 200mW Surface Mount SOT-363,
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