PBSS5112PAP,115


PBSS5112PAP,115

Part NumberPBSS5112PAP,115

Manufacturer

Description

Datasheet

Package / Case6-UDFN Exposed Pad

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

PBSS5112PAP,115 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Datasheet
Standard Package1
ManufacturerNexperia USA Inc.
Series-
PackagingCut Tape (CT)
Part StatusActive
Transistor Type2 PNP (Dual)
Current - Collector (Ic) (Max)1A
Voltage - Collector Emitter Breakdown (Max)120V
Vce Saturation (Max) @ Ib, Ic480mV @ 100mA, 1A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 500mA, 2V
Power - Max510mW
Frequency - Transition100MHz
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-UDFN Exposed Pad
Supplier Device Package6-HUSON-EP (2x2)
Base Part NumberPBSS5112

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PBSS5112PAP,115 - Tags

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