PDTB114ETR


PDTB114ETR

Part NumberPDTB114ETR

Manufacturer

Description

Datasheet

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

PDTB114ETR - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
Standard Package1
ManufacturerNexperia USA Inc.
Series-
PackagingCut Tape (CT)
Part StatusActive
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)500mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition140MHz
Power - Max320mW
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageTO-236AB

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