PDTB123YT,215
PDTB123YT,215
Part Number PDTB123YT,215
Description TRANS PREBIAS PNP 250MW TO236AB
Package / Case TO-236-3, SC-59, SOT-23-3
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Lead Time To be Confirmed
Detailed Description Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 250mW Surface Mount TO-236AB
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PDTB123YT,215 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet PDTB123YT
Standard Package 1
Manufacturer Nexperia USA Inc.
Series -
Packaging Cut Tape (CT)
Part Status Active
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 500mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 2.2 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Power - Max 250mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB
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