PMDPB58UPE,115


PMDPB58UPE,115

Part NumberPMDPB58UPE,115

Manufacturer

Description

Datasheet

Package / Case6-UDFN Exposed Pad

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

PMDPB58UPE,115 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet
Standard Package1
ManufacturerNexperia USA Inc.
Series-
PackagingCut Tape (CT)
Part StatusActive
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3.6A
Rds On (Max) @ Id, Vgs67mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs9.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds804pF @ 10V
Power - Max515mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-UDFN Exposed Pad
Supplier Device Package6-HUSON-EP (2x2)

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PMDPB58UPE,115 - Tags

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