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PMFPB8032XP,115

PMFPB8032XP,115

Part NumberPMFPB8032XP,115

ManufacturerNexperia USA Inc.

DescriptionMOSFET P-CH 20V 2.7A HUSON6

DatasheetPMFPB8032XP

Package / Case6-UDFN Exposed Pad

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 2.7A (Ta) 485mW (Ta), 6.25W (Tc) Surface Mount 6-HUSON-EP (2x2)

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PMFPB8032XP,115 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	PMFPB8032XP
Standard Package	1
Manufacturer	Nexperia USA Inc.
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V
Rds On (Max) @ Id, Vgs	102mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.6nC @ 4.5V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	550pF @ 10V
FET Feature	Schottky Diode (Isolated)
Power Dissipation (Max)	485mW (Ta), 6.25W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-HUSON-EP (2x2)
Package / Case	6-UDFN Exposed Pad

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PMFPB8032XP,115 - Tags

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