PMFPB8032XP,115
PMFPB8032XP,115
Part Number PMFPB8032XP,115 Description MOSFET P-CH 20V 2.7A HUSON6 Package / Case 6-UDFN Exposed PadUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 20V 2.7A (Ta) 485mW (Ta), 6.25W (Tc) Surface Mount 6-HUSON-EP (2x2)
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PMFPB8032XP,115 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet PMFPB8032XP Standard Package 1 Manufacturer Nexperia USA Inc. Series - Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V Rds On (Max) @ Id, Vgs 102mOhm @ 2.7A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.6nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 550pF @ 10V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 485mW (Ta), 6.25W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-HUSON-EP (2x2) Package / Case 6-UDFN Exposed Pad
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