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PMXB360ENEAZ


PMXB360ENEAZ

Part NumberPMXB360ENEAZ

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Description

Datasheet

Package / Case3-XDFN Exposed Pad

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PMXB360ENEAZ - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package5000
ManufacturerNexperia USA Inc.
Series-
PackagingTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs450mOhm @ 1.1A, 10V
Vgs(th) (Max) @ Id2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4.5nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds130pF @ 40V
FET Feature-
Power Dissipation (Max)400mW (Ta), 6.25W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDFN1010D-3
Package / Case3-XDFN Exposed Pad

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