PMXB65UPEZ
PMXB65UPEZ
Part Number PMXB65UPEZ
Description MOSFET P-CH 12V 3.2A DFN1010D-3G
Package / Case 3-XDFN Exposed Pad
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 12V 3.2A (Ta) 317mW (Ta), 8.33W (Tc) Surface Mount DFN1010D-3
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PMXB65UPEZ - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet PMXB65UPE
Standard Package 1
Manufacturer Nexperia USA Inc.
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 72mOhm @ 3.2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 634pF @ 6V
FET Feature -
Power Dissipation (Max) 317mW (Ta), 8.33W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DFN1010D-3
Package / Case 3-XDFN Exposed Pad
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