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PMXB65UPEZ

PMXB65UPEZ

Part NumberPMXB65UPEZ

ManufacturerNexperia USA Inc.

DescriptionMOSFET P-CH 12V 3.2A DFN1010D-3G

DatasheetPMXB65UPE

Package / Case3-XDFN Exposed Pad

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 12V 3.2A (Ta) 317mW (Ta), 8.33W (Tc) Surface Mount DFN1010D-3

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PMXB65UPEZ - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	PMXB65UPE
Standard Package	1
Manufacturer	Nexperia USA Inc.
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Rds On (Max) @ Id, Vgs	72mOhm @ 3.2A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	634pF @ 6V
FET Feature	-
Power Dissipation (Max)	317mW (Ta), 8.33W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DFN1010D-3
Package / Case	3-XDFN Exposed Pad

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