Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ PMZB350UPE,315

PMZB350UPE,315

PMZB350UPE,315

Part NumberPMZB350UPE,315

ManufacturerNexperia USA Inc.

DescriptionMOSFET P-CH 20V 1A 3DFN

DatasheetPMZB350UPE

Package / Case3-XFDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 1A (Ta) 360mW (Ta), 3.125W (Tc) Surface Mount DFN1006B-3

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PMZB350UPE,315 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	PMZB350UPE
Standard Package	1
Manufacturer	Nexperia USA Inc.
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	450mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id	950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	1.9nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	127pF @ 10V
FET Feature	-
Power Dissipation (Max)	360mW (Ta), 3.125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DFN1006B-3
Package / Case	3-XFDFN

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