PSMN1R2-25YL,115

Part NumberPSMN1R2-25YL,115

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	PSMN1R2-25YL
Standard Package	1
Manufacturer	Nexperia USA Inc.
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	105nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6380pF @ 12V
FET Feature	-
Power Dissipation (Max)	121W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	LFPAK56, Power-SO8
Package / Case	SOT-1023, 4-LFPAK

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