Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	PSMN2R7-30PL
Standard Package	50
Manufacturer	Nexperia USA Inc.
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	2.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	66nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3954pF @ 12V
FET Feature	-
Power Dissipation (Max)	170W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3

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STP42N60M2-EP	STMicroelectronics, N-Channel 600V 34A (Tc) 250W (Tc) Through Hole TO-220, MDmesh™ M2-EP	View
IPD200N15N3GATMA1	Infineon Technologies, N-Channel 150V 50A (Tc) 150W (Tc) Surface Mount PG-TO252-3, OptiMOS™	View

PSMN2R7-30PL,127

Part NumberPSMN2R7-30PL,127