PSMN4R8-100BSEJ
PSMN4R8-100BSEJ
Part Number PSMN4R8-100BSEJ Description MOSFET N-CH 100V D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263ABUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 120A (Tj) 405W (Tc) Surface Mount D2PAK
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PSMN4R8-100BSEJ - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet PSMN4R8-100BSE Standard Package 800 Manufacturer Nexperia USA Inc. Series - Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 120A (Tj) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4.8mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 278nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 14400pF @ 50V FET Feature - Power Dissipation (Max) 405W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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