QJD1210010


QJD1210010

Part NumberQJD1210010

Manufacturer

Description

Datasheet

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Detailed Description

QJD1210010 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet
Standard Package1
ManufacturerPowerex Inc.
Series-
PackagingBulk
Part StatusActive
FET Type2 N-Channel (Dual)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Rds On (Max) @ Id, Vgs25mOhm @ 100A, 20V
Vgs(th) (Max) @ Id5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs500nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds10200pF @ 800V
Power - Max1080W
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

QJD1210010 - Tags

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