QS8J11TCR


QS8J11TCR

Part NumberQS8J11TCR

Manufacturer

Description

Datasheet

Package / Case8-SMD, Flat Lead

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

QS8J11TCR - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet
Standard Package1
ManufacturerRohm Semiconductor
Series-
PackagingCut Tape (CT)
Part StatusNot For New Designs
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C3.5A
Rds On (Max) @ Id, Vgs43mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs22nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds2600pF @ 6V
Power - Max550mW
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SMD, Flat Lead
Supplier Device PackageTSMT8

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