R5009FNJTL
R5009FNJTL
Part Number R5009FNJTL
Description MOSFET N-CH 500V 9A LPT
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 500V 9A (Tc) 50W (Tc) Surface Mount LPTS
To learn about the specification of R5009FNJTL, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add R5009FNJTL with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of R5009FNJTL.
We are offering R5009FNJTL for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
R5009FNJTL - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet R5009FNJ
Standard Package 1
Manufacturer Rohm Semiconductor
Series -
Packaging Cut Tape (CT)
Part Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 840mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 630pF @ 25V
FET Feature -
Power Dissipation (Max) 50W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package LPTS
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
R5009FNJTL - Related ProductsMore >>
SPW21N50C3FKSA1
Infineon Technologies, N-Channel 560V 21A (Tc) 208W (Tc) Through Hole PG-TO247-3, CoolMOS™
View
FDT86113LZ
ON Semiconductor, N-Channel 100V 3.3A (Tc) 2.2W (Ta) Surface Mount SOT-223-4, PowerTrench®
View
FDS3512
ON Semiconductor, N-Channel 80V 4A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
View
TK5A60W,S4VX
Toshiba Semiconductor and Storage, N-Channel 600V 5.4A (Ta) 30W (Tc) Through Hole TO-220SIS, DTMOSIV
View
TSM60NB190CI C0G
Taiwan Semiconductor Corporation, N-Channel 600V 18A (Tc) 33.8W (Tc) Through Hole ITO-220AB,
View
IPB038N12N3GATMA1
Infineon Technologies, N-Channel 120V 120A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™
View
IRFS3006TRL7PP
Infineon Technologies, N-Channel 60V 240A (Tc) 375W (Tc) Surface Mount D2PAK (7-Lead), HEXFET®
View
SIR876ADP-T1-GE3
Vishay Siliconix, N-Channel 100V 40A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
View
2N6660
Microchip Technology, N-Channel 60V 410mA (Ta) 6.25W (Tc) Through Hole TO-39,
View
STB28NM60ND
STMicroelectronics, N-Channel 600V 23A (Tc) 190W (Tc) Surface Mount D2PAK, FDmesh™ II
View
IRFS4227TRLPBF
Infineon Technologies, N-Channel 200V 62A (Tc) 330W (Tc) Surface Mount D2PAK, HEXFET®
View
IXFP90N20X3M
IXYS, N-Channel 200V 90A (Tc) 36W (Tc) Through Hole TO-220 Isolated Tab, HiPerFET™
View
R5009FNJTL - Tags