R6007KNJTL
R6007KNJTL
Part Number R6007KNJTL Description MOSFET N-CHANNEL 600V 7A TO263 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263ABUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 7A (Tc) 78W (Tc) Surface Mount TO-263
To learn about the specification of R6007KNJTL, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add R6007KNJTL with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of R6007KNJTL.
We are offering R6007KNJTL for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
R6007KNJTL - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet R6007KNJ Standard Package 1 Manufacturer Rohm Semiconductor Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 620mOhm @ 2.4A, 10V Vgs(th) (Max) @ Id 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 14.5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 470pF @ 25V FET Feature - Power Dissipation (Max) 78W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
R6007KNJTL - Related ProductsMore >>
TSM70N900CH C5G Taiwan Semiconductor Corporation, N-Channel 700V 4.5A (Tc) 50W (Tc) Through Hole TO-251 (IPAK),
View
IRLP3034PBF Infineon Technologies, N-Channel 40V 195A (Tc) 341W (Tc) Through Hole TO-247AC, HEXFET®
View
NTD4804NT4G ON Semiconductor, N-Channel 30V 14.5A (Ta), 124A (Tc) 1.43W (Ta), 107W (Tc) Surface Mount DPAK,
View
BSP149H6906XTSA1 Infineon Technologies, N-Channel 200V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®
View
IRF200S234 Infineon Technologies, N-Channel 200V 90A 417W (Tc) Surface Mount D2PAK,
View
NDB5060L ON Semiconductor, N-Channel 60V 26A (Tc) 68W (Tc) Surface Mount D²PAK (TO-263AB),
View
IRF510STRLPBF Vishay Siliconix, N-Channel 100V 5.6A (Tc) 43W (Tc) Surface Mount,
View
DMT6016LPS-13 Diodes Incorporated, N-Channel 60V 10.6A (Ta) 1.23W (Ta) Surface Mount PowerDI5060-8,
View
STD12NF06L-1 STMicroelectronics, N-Channel 60V 12A (Tc) 42.8W (Tc) Through Hole I-PAK, STripFET™ II
View
TK9J90E,S1E Toshiba Semiconductor and Storage, N-Channel 900V 9A (Ta) 250W (Tc) Through Hole TO-3P(N),
View
DMN3020UTS-13 Diodes Incorporated, N-Channel 30V 15A (Tc) 1.4W (Ta) Surface Mount 8-TSSOP,
View
CSD13381F4 Texas Instruments, N-Channel 12V 2.1A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, NexFET™
View
R6007KNJTL - Tags
English
