Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ R6009ENJTL

R6009ENJTL

R6009ENJTL

Part NumberR6009ENJTL

ManufacturerRohm Semiconductor

DescriptionMOSFET N-CH 600V 9A LPT

DatasheetR6009ENJ

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 9A (Tc) 40W (Tc) Surface Mount LPTS (D2PAK)

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R6009ENJTL - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	R6009ENJ
Standard Package	1
Manufacturer	Rohm Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	535mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	23nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	430pF @ 25V
FET Feature	-
Power Dissipation (Max)	40W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	LPTS (D2PAK)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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