R6025JNZ4C13
R6025JNZ4C13
Part Number R6025JNZ4C13 Description R6025JNZ4 IS A POWER MOSFET WITH Package / Case TO-247-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 25A (Tc) 306W (Tc) Through Hole TO-247G
To learn about the specification of R6025JNZ4C13, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add R6025JNZ4C13 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of R6025JNZ4C13.
We are offering R6025JNZ4C13 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
R6025JNZ4C13 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet R6025JNZ4 Standard Package 30 Manufacturer Rohm Semiconductor Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 25A (Tc) Drive Voltage (Max Rds On, Min Rds On) 15V Rds On (Max) @ Id, Vgs 182mOhm @ 12.5A, 15V Vgs(th) (Max) @ Id 7V @ 4.5mA Gate Charge (Qg) (Max) @ Vgs 57nC @ 15V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 100V FET Feature - Power Dissipation (Max) 306W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247G Package / Case TO-247-3
R6025JNZ4C13 - Related ProductsMore >>
R6024KNZ1C9 Rohm Semiconductor, N-Channel 600V 24A (Tc) 245W (Tc) Through Hole TO-247,
View
SSM3K329R,LF Toshiba Semiconductor and Storage, N-Channel 30V 3.5A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSIII
View
HUF75639S3ST ON Semiconductor, N-Channel 100V 56A (Tc) 200W (Tc) Surface Mount D²PAK (TO-263AB), UltraFET™
View
APT34F60B Microsemi Corporation, N-Channel 600V 36A (Tc) 624W (Tc) Through Hole TO-247 [B],
View
IPN70R900P7SATMA1 Infineon Technologies, N-Channel 700V 6A (Tc) 6.5W (Tc) Surface Mount PG-SOT223, CoolMOS™ P7
View
SI1302DL-T1-E3 Vishay Siliconix, N-Channel 30V 600mA (Ta) 280mW (Ta) Surface Mount SC-70-3, TrenchFET®
View
STN2NF10 STMicroelectronics, N-Channel 100V 2.4A (Tc) 3.3W (Tc) Surface Mount SOT-223, STripFET™ II
View
FDPF5N60NZ ON Semiconductor, N-Channel 600V 4.5A (Tc) 33W (Tc) Through Hole TO-220F, UniFET-II™
View
IPB80N06S2L06ATMA2 Infineon Technologies, N-Channel 55V 80A (Tc) 250W (Tc) Surface Mount PG-TO263-3-2, OptiMOS™
View
IRFH5015TRPBF Infineon Technologies, N-Channel 150V 10A (Ta), 56A (Tc) 3.6W (Ta) Surface Mount 8-PQFN (5x6), HEXFET®
View
TSM5NC50CP ROG Taiwan Semiconductor Corporation, N-Channel 500V 5A (Tc) 83W (Tc) Surface Mount TO-252, (D-Pak),
View
SIHG33N65E-GE3 Vishay Siliconix, N-Channel 650V 32.4A (Tc) 313W (Tc) Through Hole TO-247AC,
View
R6025JNZ4C13 - Tags
English
