R8002ANX
R8002ANX
Part Number R8002ANX
Description MOSFET N-CH 800V 2A TO-220FM
Package / Case TO-220-3 Full Pack
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 800V 2A (Tc) 35W (Tc) Through Hole TO-220FM
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R8002ANX - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet R8002ANX
Standard Package 500
Manufacturer Rohm Semiconductor
Series -
Packaging Bulk
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.3Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 12.7nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 210pF @ 25V
FET Feature -
Power Dissipation (Max) 35W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220FM
Package / Case TO-220-3 Full Pack
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R8002ANX - Tags