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RCX081N20

RCX081N20

Part NumberRCX081N20

ManufacturerRohm Semiconductor

DescriptionMOSFET N-CH 200V 8A TO220

DatasheetRCX081N20

Package / CaseTO-220-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 8A (Tc) 2.23W (Ta), 40W (Tc) Through Hole TO-220FM

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RCX081N20 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	RCX081N20
Standard Package	500
Manufacturer	Rohm Semiconductor
Series	-
Packaging	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	770mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	5.25V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	8.5nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	330pF @ 25V
FET Feature	-
Power Dissipation (Max)	2.23W (Ta), 40W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220FM
Package / Case	TO-220-3 Full Pack

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