RD3S075CNTL1
RD3S075CNTL1
Part Number RD3S075CNTL1 Description NCH 190V 7.5A POWER MOSFET Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 190V 7.5A (Tc) 52W (Tc) Surface Mount TO-252
To learn about the specification of RD3S075CNTL1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add RD3S075CNTL1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of RD3S075CNTL1.
We are offering RD3S075CNTL1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
RD3S075CNTL1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet RD3S075CN Standard Package 1 Manufacturer Rohm Semiconductor Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 190V Current - Continuous Drain (Id) @ 25°C 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 336mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 25V FET Feature - Power Dissipation (Max) 52W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
RD3S075CNTL1 - Related ProductsMore >>
SIR186DP-T1-RE3 Vishay Siliconix, N-Channel 60V 60A (Tc) 57W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
View
BSS126H6906XTSA1 Infineon Technologies, N-Channel 600V 21mA (Ta) 500mW (Ta) Surface Mount SOT-23-3, SIPMOS®
View
PMZ600UNEYL Nexperia USA Inc., N-Channel 20V 600mA (Ta) 360mW (Ta), 2.7W (Tc) Surface Mount DFN1006-3,
View
TK6R7P06PL,RQ Toshiba Semiconductor and Storage, N-Channel 60V 46A (Tc) 66W (Tc) Surface Mount DPAK, U-MOSIX-H
View
IPD60R360P7ATMA1 Infineon Technologies, N-Channel 650V 9A (Tc) 41W (Tc) Surface Mount PG-TO252-3, CoolMOS™ P7
View
2SK3566(STA4,Q,M) Toshiba Semiconductor and Storage, N-Channel 900V 2.5A (Ta) 40W (Tc) Through Hole TO-220SIS, π-MOSIV
View
SIHB120N60E-GE3 Vishay Siliconix, N-Channel 600V 25A (Tc) 179W (Tc) Surface Mount D²PAK (TO-263),
View
IRF3805STRLPBF Infineon Technologies, N-Channel 55V 75A (Tc) 300W (Tc) Surface Mount D2PAK, HEXFET®
View
IPZA60R180P7XKSA1 Infineon Technologies, N-Channel 600V 18A (Tc) 72W (Tc) Through Hole PG-TO247-4, CoolMOS™ P7
View
FDPF18N50 ON Semiconductor, N-Channel 500V 18A (Tc) 38.5W (Tc) Through Hole TO-220F, UniFET™
View
CSD17585F5 Texas Instruments, N-Channel 30V 5.9A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™
View
IPD90N04S403ATMA1 Infineon Technologies, N-Channel 40V 90A (Tc) 94W (Tc) Surface Mount PG-TO252-3-313, Automotive, AEC-Q101, OptiMOS™
View
RD3S075CNTL1 - Tags
English
