RF4C050APTR
RF4C050APTR
Part Number RF4C050APTR
Description MOSFET P-CH 20V 10A 8HUML
Package / Case 8-PowerUDFN
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 20V 10A (Ta) 2W (Ta) Surface Mount HUML2020L8
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RF4C050APTR - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet RF4C050AP
Standard Package 1
Manufacturer Rohm Semiconductor
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 26mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 55nC @ 4.5V
Vgs (Max) -8V
Input Capacitance (Ciss) (Max) @ Vds 5500pF @ 10V
FET Feature -
Power Dissipation (Max) 2W (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package HUML2020L8
Package / Case 8-PowerUDFN
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