Categories	Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet	RGTV60TK65D
Standard Package	450
Manufacturer	Rohm Semiconductor
Series	-
Part Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650V
Current - Collector (Ic) (Max)	33A
Current - Collector Pulsed (Icm)	120A
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 30A
Power - Max	76W
Switching Energy	570µJ (on), 500µJ (off)
Input Type	Standard
Gate Charge	64nC
Td (on/off) @ 25°C	33ns/105ns
Test Condition	400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)	95ns
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3PFM, SC-93-3
Supplier Device Package	TO-3PFM

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IXYN50N170CV1	IXYS, IGBT 1700V 120A 880W Chassis Mount SOT-227B, XPT™	View
IKD10N60RATMA1	Infineon Technologies, IGBT Trench Field Stop 600V 20A 150W Surface Mount PG-TO252-3, TrenchStop™	View
RGW80TK65GVC11	Rohm Semiconductor, IGBT Trench Field Stop 650V 39A 81W Through Hole TO-3PFM,	View
STGP35HF60W	STMicroelectronics, IGBT 600V 60A 200W Through Hole TO-220,	View
STGW25H120DF2	STMicroelectronics, IGBT Trench Field Stop 1200V 50A 375W Through Hole TO-247,	View
FGH40T65UQDF-F155	ON Semiconductor, IGBT Trench Field Stop 650V 80A 231W Through Hole TO-247-3,	View
IXBK75N170	IXYS, IGBT 1700V 200A 1040W Through Hole TO-264, BIMOSFET™	View
IKW40N65WR5XKSA1	Infineon Technologies, IGBT Trench 650V 80A 230W Through Hole PG-TO247-3, TrenchStop™	View
IRG4PF50WPBF	Infineon Technologies, IGBT 900V 51A 200W Through Hole TO-247AC,	View

RGTV60TK65DGVC11

Part NumberRGTV60TK65DGVC11