RJH65D27BDPQ-A0#T2

Part NumberRJH65D27BDPQ-A0#T2

ManufacturerRenesas Electronics America

DescriptionIGBT TRENCH 650V 100A TO247A

DatasheetRJH65D27BDPQ-A0

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionIGBT Trench 650V 100A 375W Through Hole TO-247A

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RJH65D27BDPQ-A0#T2 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - IGBTs - Single

Datasheet

RJH65D27BDPQ-A0

Standard Package

Manufacturer

Renesas Electronics America

Series

Packaging

Tube

Part Status

Active

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

100A

Vce(on) (Max) @ Vge, Ic

1.65V @ 15V, 50A

Power - Max

375W

Switching Energy

1mJ (on), 1.5mJ (off)

Input Type

Standard

Gate Charge

175nC

Td (on/off) @ 25°C

20ns/165ns

Test Condition

400V, 50A, 10Ohm, 15V

Reverse Recovery Time (trr)

80ns

Operating Temperature

175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247A

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