RN1106MFV,L3F

Part NumberRN1106MFV,L3F

ManufacturerToshiba Semiconductor and Storage

DescriptionTRANS PREBIAS NPN

DatasheetRN1101MFV - RN1106MFV

Package / CaseSOT-723

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionPre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount VESM

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RN1106MFV,L3F - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet	RN1101MFV - RN1106MFV
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	4.7 kOhms
Resistor - Emitter Base (R2)	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)	500nA
Power - Max	150mW
Mounting Type	Surface Mount
Package / Case	SOT-723
Supplier Device Package	VESM

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RN1106MFV,L3F - Tags

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