RN1106MFV,L3F

Part NumberRN1106MFV,L3F

ManufacturerToshiba Semiconductor and Storage

DescriptionTRANS PREBIAS NPN

DatasheetRN1101MFV - RN1106MFV

Package / CaseSOT-723

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionPre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount VESM

To learn about the specification of RN1106MFV,L3F, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add RN1106MFV,L3F with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of RN1106MFV,L3F.
We are offering RN1106MFV,L3F for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

RN1106MFV,L3F - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet	RN1101MFV - RN1106MFV
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	4.7 kOhms
Resistor - Emitter Base (R2)	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)	500nA
Power - Max	150mW
Mounting Type	Surface Mount
Package / Case	SOT-723
Supplier Device Package	VESM

RN1106MFV,L3F - Related Products

More >>

DTC043EMT2L	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount VMT3,	View
DTC124XETL	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 50mA 250MHz 150mW Surface Mount EMT3,	View
PDTD114ETR	Nexperia USA Inc., Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 225MHz 320mW Surface Mount TO-236AB,	View
PDTC143ZM,315	Nexperia USA Inc., Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250mW Surface Mount DFN1006-3,	View
DTC115EUAT106	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 20mA 250MHz 200mW Surface Mount UMT3,	View
RN1406,LF	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount S-Mini,	View
DRC2143T0L	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 200mW Surface Mount Mini3-G3-B,	View
DTC923TUBTL	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 20V 400mA 35MHz 200mW Surface Mount UMT3F,	View
DDTC113ZUA-7-F	Diodes Incorporated, Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount SOT-323,	View
DTC123JUBHZGTL	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased + Diode 100mA 250MHz 200mW Surface Mount UMT3F, Automotive, AEC-Q101	View
DTD114EKT146	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 200MHz 200mW Surface Mount SMT3,	View
RN1106,LF(CT	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 100mW Surface Mount SSM,	View

RN1106MFV,L3F - Tags

RN1106MFV,L3F RN1106MFV,L3F PDF RN1106MFV,L3F datasheet RN1106MFV,L3F specification RN1106MFV,L3F image RN1106MFV,L3F India Renesas Electronics India RN1106MFV,L3F buy RN1106MFV,L3F RN1106MFV,L3F price RN1106MFV,L3F distributor RN1106MFV,L3F supplier RN1106MFV,L3F wholesales