RN1115MFV,L3F


RN1115MFV,L3F

Part NumberRN1115MFV,L3F

Manufacturer

Description

Datasheet

Package / CaseSOT-723

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

RN1115MFV,L3F - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
Standard Package8000
ManufacturerToshiba Semiconductor and Storage
Series-
PackagingTape & Reel (TR)
Part StatusNot For New Designs
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)2.2 kOhms
Resistor - Emitter Base (R2)10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition250MHz
Power - Max150mW
Mounting TypeSurface Mount
Package / CaseSOT-723
Supplier Device PackageVESM

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RN1115MFV,L3F - Tags

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