RN1316,LF
RN1316,LF
Part Number RN1316,LF
Description TRANS PREBIAS NPN 0.1W USM
Package / Case SC-70, SOT-323
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 100mW Surface Mount USM
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RN1316,LF - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet RN1314-18
Standard Package 1
Manufacturer Toshiba Semiconductor and Storage
Series -
Packaging Cut Tape (CT)
Part Status Active
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 4.7 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 250MHz
Power - Max 100mW
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Supplier Device Package USM
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