RN1611(TE85L,F)


RN1611(TE85L,F)

Part NumberRN1611(TE85L,F)

Manufacturer

Description

Datasheet

Package / CaseSC-74, SOT-457

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

RN1611(TE85L,F) - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet
Standard Package1
ManufacturerToshiba Semiconductor and Storage
Series-
PackagingCut Tape (CT)
Part StatusActive
Transistor Type2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)-
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition250MHz
Power - Max300mW
Mounting TypeSurface Mount
Package / CaseSC-74, SOT-457
Supplier Device PackageSM6

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RN1611(TE85L,F) - Tags

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